| PART |
Description |
Maker |
| MC68HC705B16N MC68HC705B5 68HC05B MC68HC05 MC68HC0 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
MOTOROLA[Motorola, Inc]
|
| MC68HC05 MC68HC05B16 MC68HC05B32 MC68HC05B4 MC68HC |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Motorola, Inc
|
| MC68HC705SR3 68HC705SR3 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Units
|
MOTOROLA[Motorola, Inc]
|
| MC68HC11PH8CFN3 MC68S11PH8CFN3 MC68S711PH8CFN3 MC6 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Freescale Semiconductor, Inc
|
| MC68HC705BXX 68HC05B |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Motorola Inc
|
| MC68HC705L2B MC68HC705L2CB MC68HC705L2K MC68HC05L2 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola, Inc
|
| M68HC05BD3 M68HC705BD3 |
(M68HCx05BDx) High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Freescale Semiconductor
|
| ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD
CRYSTAL 32.768KHZ 12.5PF SMD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
CRYSTAL 12.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100
3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| MC68HC11KW1 |
High-density complementary metal oxide semiconductor HCMOS) microcontroller unit 8-BIT, EEPROM, 4 MHz, MICROCONTROLLER, PQFP100
|
Motorola Mobility Holdings, Inc.
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
